<http://tbx2rdf.lider-project.eu/data/iate/dual+depletion-type+insulated-gate+felt-effekt+transistor-da#Sense> <http://www.w3.org/ns/lemon/ontolex#reference> <http://tbx2rdf.lider-project.eu/data/iate/IATE-1553194> .
<http://tbx2rdf.lider-project.eu/data/iate/dual+depletion-type+insulated-gate+felt-effekt+transistor-da> <http://tbx2rdf.lider-project.eu/tbx#reliabilityCode> "3"^^<http://www.w3.org/2001/XMLSchema#integer> .
<http://tbx2rdf.lider-project.eu/data/iate/dual+depletion-type+insulated-gate+felt-effekt+transistor-da> <http://www.w3.org/1999/02/22-rdf-syntax-ns#type> <http://www.w3.org/ns/lemon/ontolex#LexicalEntry> .
<http://tbx2rdf.lider-project.eu/data/iate/dual+depletion-type+insulated-gate+felt-effekt+transistor-da> <http://www.w3.org/ns/lemon/ontolex#language> <http://www.lexvo.org/page/iso639-3/dan> .
<http://tbx2rdf.lider-project.eu/data/iate/dual+depletion-type+insulated-gate+felt-effekt+transistor-da> <http://www.w3.org/ns/lemon/ontolex#sense> <http://tbx2rdf.lider-project.eu/data/iate/dual+depletion-type+insulated-gate+felt-effekt+transistor-da#Sense> .
<http://tbx2rdf.lider-project.eu/data/iate/dual+depletion-type+insulated-gate+felt-effekt+transistor-da> <http://www.w3.org/ns/lemon/ontolex#canonicalForm> <http://tbx2rdf.lider-project.eu/data/iate/dual+depletion-type+insulated-gate+felt-effekt+transistor-da#CanonicalForm> .
<http://tbx2rdf.lider-project.eu/data/iate/dual+depletion-type+insulated-gate+felt-effekt+transistor-da> <http://www.lexinfo.net/ontology/2.0/lexinfo#termType> <http://www.lexinfo.net/ontology/2.0/lexinfo#fullForm> .
<http://tbx2rdf.lider-project.eu/data/iate/en> <http://www.w3.org/ns/lemon/ontolex#entry> <http://tbx2rdf.lider-project.eu/data/iate/dual+depletion-type+insulated-gate+felt-effekt+transistor-da> .
<http://tbx2rdf.lider-project.eu/data/iate/dual+depletion-type+insulated-gate+felt-effekt+transistor-da#CanonicalForm> <http://www.w3.org/ns/lemon/ontolex#writtenRep> "dual depletion-type insulated-gate felt-effekt transistor"@da .